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DIN EN 62417:2010-12
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
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Summary
This document provides wafer level test procedures to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. Two test methods are described in this document: Bias temperature stress (BTS) and Voltage sweep (VS).
Technical characteristics
| Publisher | Deutsche Institut für Normung e.V. (DIN) |
| Publication Date | 12/01/2010 |
| Page Count | 9 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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