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IEEE 256:1963
IEEE Test Procedure for Semiconductor Diodes
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Summary
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This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: A semiconductor device having two terminals and exhibiting a nonlinear voltage--current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage--current characteristic exemplified by a single p-n junction. Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AI E E and IRE Standards, particularly in 60 IRE 28.SH and AI EE No. 4252.
This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: A semiconductor device having two terminals and exhibiting a nonlinear voltage--current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage--current characteristic exemplified by a single p-n junction. Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AI E E and IRE Standards, particularly in 60 IRE 28.SH and AI EE No. 4252.
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Technical characteristics
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Publication Date | 12/20/1963 |
| Edition | |
| Page Count | 10 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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