NF ISO 5618-1, B43-410-1 (12/2023)

This document provides a classification of dislocations and process-induced defects among the various surface defects encountered on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films. It is applicable to process-induced dislocations and defects emerging on the surface of the following types of GaN substrates or films: — single-crystal GaN substrate; — single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; — single-crystal GaN film formed by heteroepitaxial growth on a single-crystal substrate of aluminum oxide (Al2O3), silicon carbide (SiC) or silicon (Si). It is not applicable to defects emerging on the surface if the absolute value of the acute angle between the perpendicular to the surface and the c axis of GaN is greater than or equal to 8°.
(Automatic translation from French)