29.045 : Semiconducting materials

22/30439670 DC:2021

22/30439670 DC:2021

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BS EN IEC 60146-1-1. Semiconductor converters. General requirements and line commutated converters Part 1-1. Specification of basic

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23/30450091 DC:2023

23/30450091 DC:2023

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BS IEC 62899-203-2 Printed electronics Materials - Semiconductor Ink- Space charge limited mobility measurement in printed organic semiconductive layers

€24.00

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BS IEC 62899-203:2018

BS IEC 62899-203:2018

Superseded Historical

Printed electronics Materials. Semiconductor ink

€281.00

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BS IEC 62899-503-1:2020

BS IEC 62899-503-1:2020

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Printed electronics Quality assessment. Test method of displacement current measurement for printed thin-film transistor

€191.00

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ASTM E1438-91(2001) (R1991)

ASTM E1438-91(2001) (R1991)

Superseded Historical

Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS

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ASTM F26-87a(1999)

ASTM F26-87a(1999)

Withdrawn Most Recent

Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal (Withdrawn 2003)

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ASTM F28-91(1997)

ASTM F28-91(1997)

Superseded Historical

Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay

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ASTM F76-86(2002) (R1986)

ASTM F76-86(2002) (R1986)

Superseded Historical

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

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ASTM F77-69(1996)

ASTM F77-69(1996)

Withdrawn Most Recent

Test Method for Apparent Density of Ceramics for Electron Device and Semiconductor Application (Withdrawn 2001)

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ASTM F80-94

ASTM F80-94

Withdrawn Most Recent

Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)

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ASTM F81-01

ASTM F81-01

Withdrawn Most Recent

Standard Test Method for Measuring Radial Resistivity Variation on Silicon Wafers (Withdrawn 2003)

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ASTM F95-89(2000)

ASTM F95-89(2000)

Withdrawn Most Recent

Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)

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ASTM F110-00a

ASTM F110-00a

Withdrawn Most Recent

Standard Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique (Withdrawn 2003)

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ASTM F358-83(2002) (R1983)

ASTM F358-83(2002) (R1983)

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Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers (Withdrawn 2008)

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ASTM F374-00a

ASTM F374-00a

Superseded Historical

Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure

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