Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level
€201.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: variable capacitance diodes for tuning applications
€172.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (pulse operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave detector diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave passive limiter diodes
€281.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave active switching diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave Gunn oscillators (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave avalanche oscillators (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave avalanche oscillators (pulse operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: varactor diodes for frequency multiplication
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low noise, low power microwave transistors
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave semiconductor switches (without integrated driver circuits)
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
