Semiconductor devices; resistance of semiconductor SMDs to the combined effect of moisture and soldering heat; identical with IEC 47(Central Office)1316
€48.79
Semiconductor devices; general terms; revision of IEC 747-7, chapter II, clause 2; identical with IEC 47(Central Office)1335
€34.30
Semiconductor devices; list of recommended subscripts in IEC 60747-1, partial revision; identical with IEC 47(Secretariat)1284
€56.17
Semiconductor devices; pulse concepts and input-to-output pulse switching times; identical with IEC 47(Central Office)1315:1992
Semiconductor devices; additional concepts for field-effect transistors; identical with IEC 47(Secretariat)1312:1993
€41.78
Semiconductor devices; new concepts and letter symbols for feld-effect transistors; identical with IEC 47(Secretariat)1252:1991
Semiconductor devices; ratings and characteristics and measuring methods for insulated gate bipolar transistors (IGBTs); identical with IEC 47(Secretariat)1282:1992
Semiconductor devices; measuring methods for semiconductor pressure sensor elements; identical with IEC 47(Secretariat)1299:1992
Semiconductor devices; essential ratings and characteristics for semiconductor pressure sensor elements; identical with IEC 47(Secretariat)1300:1992
Semiconductor devices; assessment of quality levels in PPM; identical with IEC 47(Central Office)1338:1992
Semiconductor devices; insulated-gate bipolar transistors; terms and definitions; identical with IEC 60047(Central Office)1339:1992
Semiconductor devices; new and revised concepts for field effect transistors in IEC 60747-1 and IEC 60747-8 (IEC 47(Secretariat)1317:1993)
Semiconductor devices; amendment to IEC 60747-11: sectional specification for discrete semiconductor devices (IEC 47(Secretariat)1318:1993)
Semiconductor devices; measuring the turn-off behaviour of GTO-thyristors (IEC 47(Secretariat)1319:1993)
Semiconductor devices; protections of electrostatic-sensitive devices (IEC 47(Secretariat)1330:1993)
€105.42
