Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals in bars by means of the two-point-probe direct current method
€24.39
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array
€34.30
Testing of semi-conducting inorganic materials; determination of the conductivity type of silicon or germanium by means of rectification test or hot-probe
Testing of semiconductive inorganic materials; determination of the geometric dimensions of semiconductor slices; measurement of thickness
Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
Testing of materials for semiconductor technology; measurement of recombination carrier lifetime in silicon single crystals by means of photo conductive decay method; measurement on bar-shaped specimens
€41.78
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; testing of edge rounding
Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
€48.79
Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
Testing of materials for use in semiconductor technology; determination of interstitial atomic boron and phosphorus content of silicon by infrared absorption spectroscopy
Testing of materials for semiconductor technology; conversion between resistivity and dopant density; silicon
€77.20
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
€56.17
Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor and Insulation Shielding Materials
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