Testing of materials for semiconductor technology; contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
€34.30
Testing of materials for semiconductor technology; measurement of carrier lifetime in silicon single crystals; recombination carrier lifetime at low injection by photo conductive decay method
€48.79
Testing of materials for semiconductor technology; recognition of defects and inhomogeneities in semiconductor single crystals by X-ray topography; III-V-semiconductor compounds
Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen
€56.17
Testing of materials for semiconductor technology - Determination of traces of metals in liquids - Part 3: Al, Co, Cu, Na, Ni and Zn in nitric acid with ICP-MS
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
Semiconductor converters. General requirements and line commutated converters Application guide
€421.00
Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
€24.39
Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction
Testing of semi-conducting inorganic materials - Measurement of the metalurgic thickness of epitaxial layers of silicon by the stacking fault method
Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
