Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 2: Determination of photosensitivity of positive photoresists
€34.30
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; diameter and flat depth of slices
Testing of materials for semiconductor technology; determination of traces of metals in liquids; Ag, Au and Cu in nitric acid by means of AAS
Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
€41.78
Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
€56.17
Testing of materials for semiconductor technology; test method for particle analysis in liquids; microscopic determination of particles
Determination of cobalt, chromium, copper, iron and nickel as impurities in hydrofluoric acid for use in semiconductor technology by plasma-induced emission spectrometry
Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; terms of flatness deviation
€48.79
Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods
Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Determination of the thermo-mechanical dilatation of epoxy resin moulding compounds
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide
Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of water traces in gaseous hydrogen chloride by a diphosphorus pentoxide cell
