IEC 60146-1-3:1991 Semiconductor convertors - General requirements and line commutated convertors - Part 1-3: Transformers and reactors
€93.00
IEC 60146-1-1:2009 Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements
€470.00
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C-C-hydrocarbons in gaseous hydrogen chloride by gaschromatography
€41.78
Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 8: Determination of 33 elements in high-purity sulfuric acid by ICP-MS
€56.17
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram
Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method
€48.79
Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicium-dioxid coating, optical method
Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicon-dioxide coating, optical method
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
€69.91
Testing of semi-conductive inorganic materials; determination of impurity content in silicon by infrared absorption; oxygen
€34.30
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell