Blank detail specification - Unidirectional transient overvoltage suppressor diodes; German version EN 150015:1992
€41.78
Blank detail specification: Ambient-rated thyristors; German version EN 150010:1991
€56.17
Amendment to IEC 60747-2:1983 (IEC 47E/81/CDV:1997)
IEC 1964: Pin configuration for integrated circuit memory devices (IEC 47A/484/CDV:1997)
€84.58
Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors (IEC 60747-7:1988 + A1:1988 + A2:1994)
€179.53
Semiconductor devices; terms and letter symbols for GaAs fieldeffect transistors used in microwave applications; identical with IEC 47(Central Office)975
€34.30
IEC-quality assessment system for electronic components; blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification (amendment); identical with IEC 47(Central Office)983
Semiconductor devices; terminology, additional term "asymmetrical thyristor"; identical with IEC 47(Central Office)978
Harmonized system of quality assessment for electronic components: Discrete semiconductor devices
€122.34
Semiconductor devices - Discrete devices and integrated circuits - Thyristors; Identical with CEI 747-6, edition 1983
€167.66
Semiconductor devices; mechanical and climatic test methods; identical with IEC 60749, edition 1984
Semiconductor devices; terms and letter symbols for GaAs F.E.T. used in microwave applications; identical with IEC 47(Central Office)1043
Semiconductor devices; terminology; electrostatic-discharge-sensitive; identical with IEC 47(Central Office)1052
Semiconductor devices; concept of power-gain compression for GaAs F.E.T.; identical with IEC 47(Central Office)1072
Semiconductor devices; recovered charge; terminology; identical with IEC 47(Central Office)1077
